日韩精品免费视频无码专区_久久婷婷香蕉热狠狠综合_久久精品一区二区三区

塑封分立功放管

Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
DF2G0007-16N DFN 6mm×5mm 30~700 16.0 40.5 67.0 18.8 Engineering Sample
DF1G0010-16N DFN 6mm×5mm 20~1000 16.0 40.6 55.0 12.6 Engineering Sample
DXG1PH60B-10N2* DFN 4mm×4mm DC~6000 10.0 34.0 32.0 20.0 Released Product
DXG1PH22A-120N* DFN 7mm×10mm 1805~2170 50.8 42.3 55.5 14.6 Released Product
DXG2PH27A-100N* DFN 7mm×6.5mm 2496~2690 49.9 41.3 56.5 15.9 Released Product
DXG2PH36A-70N* DFN 7mm×6.5mm 3300~3800 48.1 39.3 53.5 15.4 Released Product
DXG2PH36A-100N* DFN 7mm×6.5mm 3300~3800 50.2 41.3 54.3 15.8 Released Product
DXG2PH50B-20N* DFN 4mm×4.5mm 4400~5000 42.8 47.8 37.0 16.0 In Development
DXG2PH50A-90N* DFN 7mm×6.5mm 4800~5000 49.6 41.3 48.3 12.5 In Development
DXG2PH60B-14N* DFN 4mm×4.5mm DC~6000 42.2 / 41.8 15.4 Released Product
DXG1PH60P-40N DFN 7mm×6.5mm DC~6000 46.3 33.0 31.7 21.3 Released Product
DXG1PH60P-60N* DFN 7mm×6.5mm DC~6000 47.8 40.0 55.0 19.5 Released Product
Test condition: Single-Carrier W-CDMA, IQ magnitude clipping, Input signal PAR = 7.5 dB @ 0.01 % probability on CCDF. ACPR measured in 3.84 MHz channel bandwidth @ ±5 MHz offset.
    1頁(yè) 12

DF2G0007-16N


Brief description for the product

DF2G0007-16N

DF2G0007-16N is a 16 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 30 to 700 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

30

MHz

Frequency (Max.)

700

MHz

Supply Voltage (Typ.)

28

V

Psat @325MHz 

41.1

dBm

Power Gain @ 325 MHz

19.4

dB

Efficiency @ 325 MHz

69.5

%


Note: Measured in the DF2G0007-16N application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pout=39dBm,Pulse width = 100 μs, Duty cycle = 10 %.


DF1G0010-16N


Brief description for the product

DF1G0010-16N

DF1G0010-16N is a 16 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 20 to 1000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

20

MHz

Frequency (Max.)

1000

MHz

Supply Voltage (Typ.)

28

V

Psat @325MHz (Typ.)

41.2

dBm

Power Gain @ 325 MHz

15

dB

Efficiency @ 325  MHz

72

%


Note: Measured in the DF1G0010-16N application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Input signal is CW

DXG1PH60B-10N2*


Brief description for the product

DXG1PH60B-10N2*

DXG1PH60B-10N2 is a 10 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

DC

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

40.3

dBm

Power Gain @ 3500 MHz

20.2

dB

Efficiency @ 3500 MHz

32.3

%


Note: Above Performance is the typical Doherty performance in Dynax's demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA.


DXG1PH22A-120N*


Brief description for the product

 DXG1PH22A-120N*

DXG1PH22A-120N is a 120 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1805 MHz to 2170 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)1805MHz
Frequency (Max.)2170MHz
Supply Voltage (Typ.)48V
Psat (Typ.) 50.8dBm
Power Gain @ 2110 MHz14.6dB
Efficiency @ 2110 MHz55.5%
ACPR @ 2100 MHz-35.0dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.35 V, Pout = 42.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2PH27A-100N*


Brief description for the product

DXG2PH27A-100N*

DXG2PH27A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2496 MHz to 2690 MHz. 


Operating Characteristics

ParameterValueUnit
Frequency (Min.)2496MHz
Frequency (Max.)2690MHz
Supply Voltage (Typ.)48V
Psat (Typ.) 49.9dBm
Power Gain @ 2600 MHz15.9dB
Efficiency @ 2600 MHz56.5%
ACPR @ 2600 MHz-32.5dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2PH36A-70N*


Brief description for the product

DXG2PH36A-70N*

DXG2PH36A-70N is a 70 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

3300

MHz

Frequency (Max.)

3800

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

48.1

dBm

Power Gain @ 3500 MHz

15.4

dB

Efficiency @ 3500 MHz

53.5

%

ACPR @ 3500 MHz-31.0dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.3 V, Pout = 39.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2PH36A-100N*


Brief description for the product

DXG2PH36A-100N*

DXG2PH36A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax,which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

3300

MHz

Frequency (Max.)

3800

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

50.2

dBm

Power Gain @ 3500 MHz

15.8

dB

Efficiency @ 3500 MHz

54.3

%

ACPR @ 3500 MHz

-32.0

dBC

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.2 V,Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

DXG2PH50B-20N*


Brief description for the product

DXG2PH50B-20N*

DXG2PH50B-20N is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 MHz to 5000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)4400MHz
Frequency (Max.)5000MHz
Supply Voltage (Typ.)48V
Psat (Typ.) 42.8dBm
Power Gain @ 4900 MHz16.0dB
Efficiency @ 4900 MHz47.8%

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA,  Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

DXG2PH50A-90N*


Brief description for the product

DXG2PH50A-90N*

DXG2PH50A-90N is a 90 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.


Operating Characteristics

ParameterValueUnit
Frequency (Min.)4800MHz
Frequency (Max.)5000MHz
Supply Voltage (Typ.)48V
Psat (Typ.) 49.6dBm
Power Gain @ 4880 MHz12.5dB
Efficiency @ 4880 MHz48.3%
ACPR @ 4880 MHz-32.0dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.6 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

DXG2PH60B-14N*


Brief description for the product

DXG2PH60B-14N*

DXG2PH60B-14N is a 14 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

42.2

dBm

Power Gain @ 3500 MHz

15.4

dB

Efficiency @ 3500 MHz

41.8

%

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQ = 20 mA, Pout = Psat - 6 dB, Pulsed CW, Pulse width = 100 μs, Duty cycle = 10 %.

DXG1PH60P-40N


Brief description for the product

DXG1PH60P-40N

DXG1PH60P-40N is a 40 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station

applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

DC

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

46.3

dBm

Power Gain @ 1842 MHz

21.3

dB

Efficiency @ 1842 MHz

31.7

%

ACPR @ 1842 MHz

-41.0

dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS= 48 V, IDQA = 20 mA, VGSB = - 5.1 V, Pout = 33.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 10.8 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

 


DXG1PH60P-60N*


Brief description for the product

DXG1PH60P-60N*

DXG1PH60P-60N is a 60 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station

applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

DC

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

47.8

dBm

Power Gain @  1842   MHz

19.5

dB

Efficiency  @    1842   MHz

55.0

%

ACPR @   1842   MHz

-30.0

dBC

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 45 mA, VGSB = - 5.0 V, Pout = 40.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.